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GaN epiwafers

GaN epiwafers and devices OEM
GaN-on-Si for vertical HEMT Comparative Selection>
GaN-on-Si for vertical power devices

适用于准垂直结构SBD

尺寸 4-6英寸厚度>5μmμ＞800 cm2/Vs
GaN-on-Si for power device Comparative Selection>
GaN-on-Si for power devices

高耐压HEMT外延片，适用于快充等应用领域的功率器件制备

尺寸 4、6、8英寸耐压 650V方阻 350 ohm/sq
GaN-on-Si for MEMS devices Comparative Selection>
AlN template on Si for filters Comparative Selection>
GaN-on-Sapphire for HEMT/SBD Comparative Selection>
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